APPARENT AGEING OF A SEMICONDUCTOR CAUSED BY THE MIGRATION OF DEFECTS.LANYI S.1978; ACTA PHYS. SLOV.; CSK; DA. 1978; VOL. 28; NO 3; PP. 198-209; ABS. RUS; BIBL. 9 REF.Article

COUPLING OF INTERFACE CHARGE TRANSFER TO BULK TRANSPORT PROPERTIES OF IONIC CRYSTALSLANYI S.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 27; NO 7; PP. 743-745; BIBL. 8 REF.Article

CONTACT-LIMITED CONDUCTION IN V₂O₅ SINGLE CRYSTALSLANYI S.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 54; NO 1; PP. 37-43; ABS. GER; BIBL. 24 REF.Article

ELECTRICAL CONDUCTIVITY OF NACL/GRAPHITE INTERFACE.LANYI S.1978; CZECHOSL. J. PHYS.; CZECHOSL.; DA. 1978; VOL. 28; NO 5; PP. 547-555; BIBL. 19 REF.Article

Analysis of linearity errors of inverse capacitance position sensorsLANYI, S.Measurement science & technology (Print). 1998, Vol 9, Num 10, pp 1757-1764, issn 0957-0233Article

SOME ELECTRICAL AND THERMAL PROPERTIES OF HGI₂ SINGLE CRYSTALS.LANYI S; DIKANT J; RUZICKA M et al.1978; ACTA PHYS. SLOV.; CSK; DA. 1978; VOL. 28; NO 3; PP. 210-221; ABS. RUS; BIBL. 26 REF.Article

A complex impedance study of Pt/NaCl and C/NaCl interfacesLANYI, S; HRICOVINI, K.The Journal of physics and chemistry of solids. 1983, Vol 44, Num 9, pp 905-912, issn 0022-3697Article

A complex impedance study of Pt/NaCl and C/NaCl interfaces = Etude de l'impédance complexe des interfaces Pt/NaCl et C/NaCl = Eine Untersuchung der komplexen Impedanz von Pt/NaCl- und C/NaCl-GrenzflaechenLANYI, S; HRICOVINI, K.The Journal of physics and chemistry of solids. 1983, Vol 44, Num 9, pp 905-912, issn 0022-3697Article

PRELUCRAREA NAMOLULUI BIOLOGIC IN SCOPUL VALORIFICARII AGRICOLE = TRAITEMENT DE LA BOUE BIOLOGIQUE POUR SA VALORISATION AGRICOLEGHEDERIM V; FRANK N; CONSTANTINESCU I et al.1981; STUD.-EPUR. APELOR; ISSN 509124; ROM; DA. 1981; VOL. 20; PP. 111-124; ABS. ENG/FRE; BIBL. 6 REF.Article

Low-operating-voltage wide-range bimorph scannersOZVOLD, M; LANYI, S.Physica status solidi. A. Applied research. 1992, Vol 131, Num 1, pp 101-104, issn 0031-8965Conference Paper

TREATMENT OF ORGANIC IMPURITIES CONTENT WATERS FOR HIGH TEMPERATURE HIGH PRESSURE INDUSTRIEL PLANTSCONSTANTINESCU I; CONSTANTINESCU I et al.LANYI S; CONSTANTINESCU I; CONSTANTINESCU I et al.1976; BUL. INST. POLITEH. "GHEORGHE GHEORGHIU-DEJ" BUCURESTI; ROMAN.; DA. 1976; VOL. 38; NO 1; PP. 33 -38; ABS. ALLEM.; BIBL. 16 REF.Article

The noise of input stages with low parasitic capacitanceLANYI, S.Measurement science & technology (Print). 2001, Vol 12, Num 9, pp 1456-1464, issn 0957-0233Conference Paper

On the influence of an ultrathin AL overlayer on GaAs plasma oxide growth kineticsPINCIK, E; LANYI, S; NADAZDY, V et al.Thin solid films. 1994, Vol 249, Num 1, pp 44-49, issn 0040-6090Article

Platinum contamination of oxide grown by plasma anodization of gallium arsenideLANYI, S; PAVLYAK, F; PINCIK, E et al.Surface and interface analysis. 1988, Vol 11, Num 11, pp 553-558, issn 0142-2421Article

Improved wide-range bimorph scannersLANYI, S; OZVOLD, M.Ultramicroscopy. 1992, Vol 42-44, Num B, pp 1664-1667, issn 0304-3991Conference Paper

Deep level transient spectroscopy study of CaF₂/GaAs(111) and SrF₂/GaAs(111) structures grown by molecular beam epitaxyLANYI, S; NOVIKOV, S. V; SOKOLOV, N. S et al.Thin solid films. 1991, Vol 204, Num 1, pp 133-138, issn 0040-6090Article

Diffusion effects at Pt-GaAs interfacesGRUSHA, S. A; KHAZAN, L. S; KONAKOVA, R. V et al.Thin solid films. 1992, Vol 215, Num 1, pp 50-51, issn 0040-6090Article